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Low Voltage Mosfet
1.00 - 10.00 USD ($)/Piece
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Low Voltage Mosfet Price And Quantity
- 1.00 - 10.00 USD ($)/Piece
- 10000 Piece
Low Voltage Mosfet Trade Information
- 20000 Piece Per Month
- 7-15 Days
- Asia Australia Central America North America South America Eastern Europe Western Europe Middle East Africa
Product Description
Description:
The RM series products utilizes Norsem's outstanding standard turbo process and packaging techniques to achieve ultral low on-resistance and low gate charge and to provide the industry's best-in-class performance. These features make this series products extremely efficient, temperature characteristics and reliable for use in power management, synchronous rectification, battery protection, load switch and a wide variety of other applications.
Features and Benefits:
- Standard Turbo MOSFET process technology.
- Optimized the cell structure.
- Low on-resistance and low gate charge.
- Featuring low switching and drive losses.
- Fast switching and reverse body recovery.
- High ruggedness and robustness.
Main Product Characteristics :
| V(BR)DSS | 30V |
| RDS(ON) | 5.8m(max.) |
| ID | 100A |
Absolute Maximum Ratings (TC=25oC unless otherwise specified)
| Parameter | Symbol | Max. | Unit |
| Drain-Source Voltage | VDS | 30 | V |
| Gate-to-Source Voltage | VGS | + 20 | V |
| Continuous Drain Current, @ Steady-State 1 | ID @ TC = 25oC | 100 | A |
| Continuous Drain Current, @ Steady-State | ID @ TC = 100oC | 68 | A |
| Pulsed Drain Current 2 | IDM | 400 | A |
| Power Dissipation | PD @TA = 25oC | 83 | W |
| PD @TA = 100oC | 37.8 | ||
| Linear Derating Factor | TA = 25oC | 0.66 | W/oC |
| Single Pulse Avalanche Energy3 | EAS | 780 | mJ |
| Junction-to-Case | RJC | 0.6 | oC/W |
| Junction-to-Ambient (PCB Mounted, Steady-State) 4 | RJA | 62.5 | oC/W |
| Operating Junction and Storage Temperature Range | TJ /TSTG | -55 to + 150 | oC |
Electrical Characteristics (TC=25oC unless otherwise specified)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | uA |
| TJ=125oC | - | - | 50 | |||
| Gate-to-Source Forward Leakage IGSS | IGSS | VGS =20V | - | - | 100 | nA |
| VGS =-20V | - | - | -100 | |||
| Static Drain-to-Source On- Resistance | RDS (on) | VGS=10V, ID=50A | - | 4.3 | 5.8 | m |
| VGS=4.5V, ID=15A | - | 5.2 | 7.5 | |||
| Gate Resistance | Rg | f-1MHz | - | 1.8 | - | |
| Gate Threshold Voltage | VGS (th) | VDS=VGS, ID=250uA | 1.0 | 1.6 | 2.6 | V |
| Input Capacitance | Ciss | VGS=0V, VDS=5V | - | 2180 | - | pF |
| Output Capacitance | Coss | - | 270 | - | ||
| Reverse transfer capacitance | Crss | - | 210 | - | ||
| Total Gate Charge | Qg | ID=30A, VDS=24V, VGS=10V | - | 47.2 | - | nC |
| Gate-to-Source Charge | Qgs | - | 8.8 | - | ||
| Gate-to-Drain("Miller") Charge | Qgd | - | 9.6 | - | ||
| Turn-on Delay Time | td (on) | VGS=4.5V, VDD=20V, ID=60A, RGEN=1.8 | - | 12.3 | - | nS |
| Rise Time | tr | - | 87.3 | - | ||
| Turn-Off Delay Time | td (off) | - | 140 | - | ||
| Fall Time | tf | - | 82.4 | - | ||
| Source-Drain Ratings and Characteristics | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max | Unit |
| Continuous Source Current (Body Diode) | Is | MOSFET symbol showing the integral reverse p-n junction diode. | - | - | 100 | A |
| Pulsed Source Current (Body Diode) | Ism | - | - | 400 | A | |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | - | 0.9 | 1.2 | V |
| Reverse Recovery Time | trr | TJ = 25oC, IF =30A, di/dt = 100A/s | - | 16.5 | - | ns |
| Reverse Recovery Charge | Qrr | - | 6.5 | - | uC | |
Notes :
1. Pulse test: Pulse Width300us, Duty cycle 2%.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. L=0.5mH, VDD=15V, Rg=25,TJ=25oC.
4. Device mounted on FR-4 PCB, 1inch x 0.85inch x 0.062 inch.
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